inchange semiconductor isc product specification isc silicon npn power transistor BD303 isc website www.iscsemi.cn description dc current gain - : h fe = 30(min.)@ i c = 2a collector-emitter breakdown voltage- : v (br)ceo = 60v(min.) complement to type bd304 applications designed for audio output stages up to 25w, vertical deflection circuits in color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i cm collector current-peak 12 a i b b base current-continuous 2 a p c collector power dissipation @ t c =25 55 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.3 /w
inchange semiconductor isc product specification isc silicon npn power transistor BD303 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 200ma; i b = 0 60 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v i ceo collector cutoff current v ce = 30v; i b = 0 b 1.0 ma i cbo collector cutoff current v cb = 40v; i e = 0; t c = 150 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 5.0 ma h fe dc current gain i c = 2a; v ce = 2v 30 f t current-gain?bandwidth product i c = 0.3a; v ce = 3v 3 mhz isc website www.iscsemi.cn 2
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